光柵，Wasatch Photonics光柵，LightSmyth光柵，透射光柵，反射光柵，全息光柵
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LightSmyth光柵LightSmyth光柵LightSmyth光柵

LightSmyth光柵

Lightsmyth成立于2000年，致力于納米產(chǎn)品的開發(fā)創(chuàng)新。2007年，lightsmyth的高性能衍射光柵在光通信、國(guó)防和生物科技市場(chǎng)中獲得市場(chǎng)認(rèn)可。直到今天，lightsmyth所提供的超過100多種優(yōu)化的光柵產(chǎn)品廣泛應(yīng)用于各種領(lǐng)域。lightsmyth產(chǎn)品和創(chuàng)新是圍繞全息衍射原理，通過結(jié)合先進(jìn)的半導(dǎo)體模型工具如深紫外線（DUV）步進(jìn)電機(jī)制造中的應(yīng)用/掃描儀進(jìn)行生產(chǎn)制造。

Lightsmyth是納米光子學(xué)創(chuàng)新產(chǎn)品開發(fā)的領(lǐng)導(dǎo)者。創(chuàng)新包括超高效率的偏振不敏感光柵的電信產(chǎn)品線，硅基板等超低散射高質(zhì)量功能先進(jìn)的衍射光柵。

LightSmyth熔融石英和高強(qiáng)度介電薄膜生產(chǎn)透射光柵，采用業(yè)界當(dāng)前先進(jìn)投影光刻基板和和反應(yīng)性離子蝕刻技術(shù)。這種高保真半導(dǎo)體制造方法使用專有衍射光柵設(shè)計(jì)，實(shí)現(xiàn)效率精確接近100％，線間距控制到百萬分之一。綜合量產(chǎn)制造的成本效益考慮，沒有其他的光柵技術(shù)能夠達(dá)到lightsmyth這種程度的性能。正因?yàn)閷?duì)設(shè)計(jì)和技術(shù)的不懈追求，LightSmyth的光柵具有很寬的波長(zhǎng)范圍，并且可以調(diào)整入射角進(jìn)一步得到更高性能。

高寬帶高衍射效率
低偏振靈敏度
功能卓越，均勻刻線槽
僅采用熔融石英和高強(qiáng)度電介質(zhì)，無聚合物
非常高的環(huán)境穩(wěn)定性，通過Tellcordia質(zhì)量認(rèn)證
每個(gè)光柵均為母光柵：低散射，無重影
大的通光區(qū)域：直徑可達(dá)140毫米
非常有競(jìng)爭(zhēng)力的價(jià)格
嚴(yán)格的質(zhì)量控制：通過ISO9001:2008質(zhì)量體系認(rèn)證

高級(jí)透射光柵（電信）-光通信高效率偏振無關(guān)透射光柵

透射光柵是使透射光形成光譜的光柵。LightSmyth高性價(jià)比透射光柵采用業(yè)界先進(jìn)的設(shè)計(jì)和精確的光刻晶圓級(jí)制造技術(shù)，光學(xué)性能與低成本不斷刷新紀(jì)錄，為您的光學(xué)系統(tǒng)提供強(qiáng)大的競(jìng)爭(zhēng)優(yōu)勢(shì)。高衍射效率，低PDL和極具競(jìng)爭(zhēng)力的價(jià)格為您提供世界上高性價(jià)比的透射光柵。

LightSmyth光柵

Description
T-940-C
T-966-C
T-940-L
T-940-CL
Units
Groove Density
940.07
966.2
940.07
940.07
grooves/mm
Operational Wavelength Range
1526-1566
(C band)
1526-1566
(C band)
1570-1610
(L band)
1526-1610
(C+L band)
nm
Optimum Incidence Angle
46.5
48.3
48.4
47.5
degrees
Groove Density Uniformity
0.001
0.001
0.001
0.001
grooves/mm
Diffraction Efficiency (s- and p-polarization)
> 94
> 94
> 94
> 92
%
Polarization Dependent Loss
< 0.2
< 0.2
< 0.2
< 0.25
dB
Spectral Non-Uniformity
< 0.15
< 0.15
< 0.15
< 0.25
dB
Spatial PDL Non-Uniformity
< 0.1
< 0.1
< 0.1
< 0.1
dB

Type Substrate Size Clear Aperture Part Number
C band, 940 grooves/mm 24 × 9 mm 23 × 8 mm T-940C-2409-94
  24 × 14 mm 23 × 13 mm T-940C-2414-94
C band, 966 grooves/mm 16 × 10 mm 15 × 9 mm T-966C-1610-94
  27 × 10 mm 26 × 9 mm T-966-C-2710-94
  24 × 16.4 mm 23 × 15.4 mm T-966C-24x16.4-94
L band, 940 grooves/mm 27.4 × 10 mm 26.4 × 9 mm T-940L-2710-94
C+L band, 940 grooves/mm 27.4 × 10 mm 26.4 × 9 mm T-940CL-2710-92

 

高級(jí)反射光柵（電信）

LightSmyth使用電信級(jí)偏振分集光學(xué)設(shè)計(jì)和激光頻率穩(wěn)定技術(shù)生產(chǎn)高效率反射光柵。采用投影光刻和反應(yīng)性離子蝕刻技術(shù)在硅單晶基底上金屬化，以實(shí)現(xiàn)單極化的高效性能。每個(gè)光柵均設(shè)計(jì)為母光柵，而不是復(fù)制光柵，達(dá)到低散射光和持久性能目標(biāo)。

  • 單極化超高效率
  • 采用高強(qiáng)度介電材料，不使用聚合物
  • 每個(gè)光柵均是超低散射母光柵
  • 高競(jìng)爭(zhēng)力價(jià)格，Telcordia質(zhì)量認(rèn)證
Line Density
Size
Performance Grade
Part Number
1200 lines/mm
12.5 × 12.5 mm
High
SLG-C12-1212A-Au-HP
25 × 25 mm
High
SLG-C12-2525A-Au-HP

 

標(biāo)準(zhǔn)反射光柵

  • 每塊光柵都是高性能的母板，不使用聚合物
  • 超低成本（低于復(fù)制光柵）
  • 免費(fèi)復(fù)制/缺陷檢測(cè)核定；超低散射
  • 高強(qiáng)度單晶硅基板
  • 近似于銅的熱導(dǎo)率
  • 高硼硅玻璃，減少熱膨脹
Line Density
(lines/mm)
λPE 1
Size
Part number
1200
580 nm (s), 1 μm to 1.55 μm (p)
12.5 mm × 12.5 mm
SLG-C12-1212A-Al
1200
580 nm (s), 1 μm to 1.55 μm (p)
25 mm × 25 mm
SLG-C12-2525A-Al
1200
580 nm (s), 1 μm to 1.55 μm (p)
50 mm × 30 mm 2
SLG-C12-5030A-Al
1800
390 nm (s), 660 nm to 1.0 μm (p)
20 mm × 9 mm 2
SLG-C18-2009A-Al
2400
300 nm (s),430 nm to 780 nm(p)
12.5 mm × 12.5 mm
SLG-C24-1212A-Al
3600
240 nm (s), 480 nm (p)
12.5 mm × 12.5 mm
SLG-C36-1212A-Al

X射線和深紫外光柵列表

Line Density
(lines/mm)
Groove depth
Size
Part number
7200
50 nm
12.5 mm × 12.5 mm
SLG-C72-1212A-Au
7200
50 nm
25 mm × 25 mm
SLG-C72-2525A-Au
7200
50 nm
50 mm × 50 mm
SLG-C72-5050A-Au

 

脈沖壓縮透射光柵

脈沖壓縮光柵重要的性質(zhì)是衍射效率高和低的波前變形，面向光柵的多通使用要求。激光脈沖壓縮傳輸光柵基于LightSmyth破紀(jì)錄的透射光柵平臺(tái)。優(yōu)化的線性P-偏振衍射效率在94％以上，它可以讓我們的客戶小化系統(tǒng)光學(xué)損耗，尤其面向高能激光器。

優(yōu)點(diǎn)
  • 對(duì)指定的偏振有特殊的衍射效率
  • 寬帶和低角度的敏感性特殊設(shè)計(jì)
  • 超拋光石英基底使波前變形小化
  • 使用熔融石英和高可靠介電材料
  • 不使用聚合物或有機(jī)材料
  • 每個(gè)光柵均為超低散射母光柵
Description
LSFSG-1000
T-1200-850
T-1500-875
T-1850-915s
T-1850-970s
T-1600-976s
T-1600-1060s
Units
Line Density
1000
1208.46
1503.76
1851.851
1851.851
1600
1600
l/mm
Operational Wavelength Range
1040±20
850±20
875±20
915±10
970±10
976±10
1060±20
nm
Optimum Angle of Incidence
31.0 ± 1
30.7 ±1
41.0 ±1
57.9±1
63.9±1
51.3±1
58.0±1
°
Line Density Uniformity (within grating)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
l/mm
Optimal Polarization
any
any
any
S-
S-
S-
S-
nm
Diffraction Efficiency
> 94
> 94
> 94
> 93
> 93
> 94
> 94
%

Line Density Wavelength, Polarization Substrate Size 1, 2 Part Number
1000 lines/mm 1040 nm, any 31.8 × 12.3 mm LSFSG-1000-3212-94
31.8 × 24.8 mm LSFSG-1000-3225-94
130.0 × 12.3 mm LSFSG-1000-13012-94
130.0 × 20 mm LSFSG-1000-13020-94
up to 135 mm diameter LSFSG-1000-cust
1200 lines/mm 850 nm, any 21.65 × 15.9 mm T-1200-850-2216-94
130.0 × 12.3 mm T-1200-850-13012-94
130.0 × 20 mm T-1200-850-13020-94
up to 135 mm diameter T-1200-850-cust
1500 lines/mm 875 nm, any 24.8 × 15.9 mm T-1500-875-2516-94
130.0 × 12.3 mm T-1500-875-13012-94
130.0 × 20 mm T-1500-875-13020-94
up to 135 mm diameter T-1500-875-cust
1850 lines/mm 915 nm, S 31.8 × 10.0 mm T-1850-915s-3210-93
31.8 × 20.2 mm T-1850-915s-3220-93
130.0 × 10.0 mm T-1850-915s-13010-93
130.0 × 20.2 mm T-1850-915s-13020-93
up to 135 mm diameter T-1850-915s-cust
1850 lines/mm 970 nm, S 31.8 × 10.0 mm T-1850-970s-3210-93
31.8 × 20.2 mm T-1850-970s-3220-93
130.0 × 10.0 mm T-1850-970s-13010-93
130.0 × 20.2 mm T-1850-970s-13020-93
up to 135 mm diameter T-1850-970s-cust
1600 lines/mm 976 nm, S 31.8 × 12.3 mm T-1600-976s-3212-94
40 × 10 mm T-1600-976s-4010-94
31.8 × 24.8 mm T-1600-976s-3225-94
130.0 × 12.3 mm T-1600-976s-13012-94
130.0 × 20 mm T-1600-976s-13020-94
up to 135 mm diameter T-1600-976s-cust
1600 lines/mm 1060 nm, S 31.8 × 12.3 mm T-1600-1060s-3212-94
31.8 × 24.8 mm T-1600-1060s-3225-94
130.0 × 10 mm T-1600-1060s-13010-94
130.0 × 20 mm T-1600-1060s-13020-94
up to 135 mm diameter T-1600-1060s-cust

 

Nanopatterned Silicon Stamps

LightSmyth提供種類繁多的納米制造單結(jié)晶硅基底，為納米光子學(xué)研究行業(yè)和學(xué)術(shù)機(jī)構(gòu)提供了一個(gè)低成本應(yīng)用的方案�？捎糜诟鞣N應(yīng)用在光學(xué)、光子學(xué)、生物學(xué)、化學(xué)、物理學(xué)（如中子散射）、高分子材料研究、納米、微流體和其他的基板。如果需要的話，可以在基板進(jìn)行金屬或介電材料鍍膜。大多數(shù)截面型材的表面特征略呈梯形，有直線平行的臺(tái)地和溝槽以及格狀結(jié)構(gòu)�？商峁┒喾N特征尺寸和溝槽深度�；宓腟EM圖像，可以在裝運(yùn)之前進(jìn)行更新的確認(rèn)。

Description Value
Clear Aperture (CA) 0.5 mm from substrate edge (the pattern may extend to the edge of the substrate)  
Substrate Thickness 0.675 ± 0.050 mm
Surface Quality in CA P/N ends with "-P": 60/40 scratch/dig: 0.06 mm maximum scratch width, 0.4 mm maximum dig diameter. up to 20/10 specification may be provided at a premium
Surface Quality in CA P/N ends with "-S": Discounted grade due to surface quality. Has at least 80% of usable area. Up to 80/100 scratch/dig/particles and irregular substrate shape may present
Surface Quality outside of CA no requirements
Material Single crystal silicon, reactive ion etch

線性納米結(jié)構(gòu)

Period Groove depth Duty cycle 1 Line width 2 Size 3 Part number
139 nm 50 nm 50% 69.5 nm 12.5×12.5×0.7 mm SNS-C72-1212-50-P
139 nm 50 nm 50% 69.5 nm 25×25×0.7 mm SNS-C72-2525-50-P
278 nm 110 nm 50% 139 nm 12.5×12.5×0.7 mm SNS-C36-1212-110-S
416.6 nm 110 nm 50% 208 nm 12.5×12.5×0.7 mm SNS-C24-1212-110-P
500 nm multiple 44% 220 nm 8×8.3×0.7 mm SNS-C20-0808-xxx-D45-P
500 nm multiple 60% 300 nm 8×8.3×0.7 mm SNS-C20-0808-xxx-D60-P
555.5 nm 110 nm 50% 278 nm 20×9×0.7 mm SNS-C18-2009-110-D50-P
555.5 nm 140 nm 50% 278 nm 20×9×0.7 mm SNS-C18-2009-140-D50-P
555.5 nm 110 nm 29% 158 nm 20×9×0.7 mm SNS-C18-2009-110-D29-P
555.5 nm 140 nm 29% 158 nm 20×9×0.7 mm SNS-C18-2009-140-D29-P
600 nm multiple 43% 260 nm 8×8.3×0.7 mm SNS-C16.7-0808-xxx-D45-P
600 nm multiple 55% 330 nm 8×8.3×0.7 mm SNS-C16.7-0808-xxx-D55-P
606 nm 190 nm 50% 303 nm 29×12×0.7 mm SNS-C16.5-2912-190-P
606 nm 190 nm 50% 303 nm 29×12×0.7 mm SNS-C16.5-2912-190-S
606 nm 190 nm 50% 303 nm 29×24.2×0.7 mm SNS-C16.5-2924-190-P
675 nm 170 nm 32% 218 nm 24×10×0.7 mm SNS-C14.8-2410-170-P
675 nm 170 nm 32% 218 nm 24×30.4×0.7 mm SNS-C14.8-2430-170-P
700 nm multiple 47% 330 nm 8×8.3×0.7 mm SNS-C14.3-0808-xxx-D45-P
700 nm multiple 55% 375 nm 8×8.3×0.7 mm SNS-C14.3-0808-xxx-D55-P
833.3 nm 200 nm 50% 416 nm 12.5×12.5×0.7 mm SNS-C12-1212-200-P
833.3 nm 200 nm 50% 416 nm 25×25×0.7 mm SNS-C12-2525-200-P

2維納米模板

Period Lattice type Groove depth Feature width Size Part number
500 nm rect post multiple 135 nm 8×8.3×0.7 mm S2D-24B1-0808-xxx-P
500 nm rect post multiple 210 nm 8×8.3×0.7mm S2D-18B1-0808-xxx-P
600 nm rect post multiple 195 nm 8×8.3×0.7mm S2D-24B2-0808-xxx-P
600 nm rect post multiple 275 nm 8×8.3×0.7mm S2D-18B2-0808-xxx-P
700 nm rect post multiple 260 nm 8×8.3×0.7mm S2D-24B3-0808-xxx-P
700 nm rect post multiple 350 nm 8×8.3×0.7mm S2D-18B3-0808-xxx-P
500 nm hex post multiple 165 nm 8×8.3×0.7mm S2D-18C1-0808-xxx-P
600 nm hex post multiple 165 nm 8×8.3×0.7mm S2D-24C2-0808-xxx-P
600 nm hex post multiple 240 nm 8×8.3×0.7mm S2D-18C2-0808-xxx-P
700 nm hex post multiple 220 nm 8×8.3×0.7mm S2D-24C3-0808-xxx-P
700 nm hex post multiple 290 nm 8×8.3×0.7mm S2D-18C3-0808-xxx-P
600 nm hex hole multiple 180 nm 8×8.3×0.7mm S2D-24D2-0808-xxx-P
700 nm hex hole multiple 200 nm 8×8.3×0.7mm S2D-18D3-0808-xxx-P
700 nm hex hole multiple 290 nm 8×8.3×0.7mm S2D-24D3-0808-xxx-P

 
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